PART |
Description |
Maker |
EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA33 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V. Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.1V. Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V. Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green). Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow). Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V. Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
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Gilway Technical Lamp
|
S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
|
S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
|
CRG01 CRG02 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications
|
TOSHIBA
|
1GU42 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
|
TOSHIBA
|
SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
|
021-3220 021-4510 021-4520 021-2220 042-3300 021-4 |
KNOB BLACK KNOB GREY ZIFFERNSCHEIBE TYP 3 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 0 KNOPFDM 14.5 PFEILSCHEIBE DM36.0 SCHWARZ ZIFFERNSCHEIBE TYP 1 KNOPFDM 36.0 ZIFFERNSCHEIBE TYP 2 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 1 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 9 KNOPFDM 14.5 ZIFFERNSCHEIBE典型9 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 8 KNOPFDM 21.0 ZIFFERNSCHEIBE典型8 KNOPFDM 21.0
|
EPCOS AG
|
1000GXHH23 |
Fast Recovery Rectifier Silicon Diffused Type
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
05B4B48 |
Silicon Diffused Type Rectifier Stack 硅扩散型整流器堆
|
Cooper Power Tools / Utica
|
3000YKD23 |
THYRISTOR SILICON DIFFUSED TYPE (RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC3583 |
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz NPN Silicon Epitaxial Transistor
|
TY Semiconductor Co., L... TY Semicondutor
|
DSA26 DSA26G |
Diffused Junction Type Silicon Diode 2.6A Power Rectifier
|
SANYO
|
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